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A RRAM to Boost Flash Storage

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Crossbar emerges from "stealth-mode" and announces its take on high density non-volatile memory-- Resistive RAM (RRAM), a technology promising up to 1 terabyte of storage on a single 200mm-square die.

Crossbar RRAmThe company claims RRAM offers X20 faster write speed, X20 lower power consumption and X10 the endurance at half the die size compared to best-in-class NAND flash, with a simple three-layer structure allowing the "stacking" of multiple terabytes of storage on a single chip.

The technology is also CMOS compatible, allowing the easy integration of logic and memory into a single chip.

In a few words, RRAM consists of 3 layers-- a metallic top electrode, a switching medium and a bottom non-metallic electrode, with ions passing between the top and bottom electrodes creating the 1s and 0s of digital storage. Thus it is different from NAND (since it uses no transistors) or memristor memory (consists of two electrodes on either side of a chalcogenide).

IDC: Q2 Tablet Shipments Slow Down

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Global Q2 2013 tablet shipments experience a -9.7%  Q-o-Q decline according to IDC, even if Y-o-Y growth reaches 59.6% on the 28.3 million devices shipped during the quarter.

Top vendor Apple sees lower-than-predicted Q2 2013 shipments of 14.6m units (down from 19.5m in Q1 2013) due to a lack of March product launches, as do 2nd and 3rd ranking vendors Samsung (8.1m units) and Asus (2.0m).

IDC Tablets

"A new iPad launch always piques consumer interest in the tablet category and traditionally that has helped both Apple and its competitors," IDC says. "With no new iPads, the market slowed for many vendors, and that's likely to continue into Q3 2013. However, by Q4 2013 we expect new products from Apple, Amazon, and others to drive impressive growth in the market."

Samsung Produces 3D Vertical NAND

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Samsung claims it "breaks through the current scaling limit for existing NAND flash technology" as it kicks off mass production of the first 3D Vertical NAND (V-NAND) flash memory.

3D V-NANDAccording to the company V-NAND offers 128Gb density in a single chip through the use of a proprietary vertical cell structure based on 3D Charge Trap Flash (CTF) technology and the vertical interconnect process.

The combination provides twice the scaling of 20nm-class planar NAND flash, beating the scaling limits of traditional NAND flash products caused by cell-to-cell interference. The "3D" structure stacks cell layers vertically, using an etching technology (aka the "vertical interconnect process") to connect layers electronically by punching holes from highest to bottom layers.

USB Gets Version 3.1

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The USB 3.0 Promoter Group announces the availability the USB 3.1 specification-- meaning vendors can now make devices with SuperSpeed USB with data transfer rates of up to 10Gbps.

USB CableAccording to the Group SuperSpeed USB 10Gbps uses more efficient data encoding and delivers twice the effective data throughput of existing SuperSpeed USB.

It remains fully backwards compatible with existing USB connectors and cables, including 5Gbps and USB 2.0 products.

Symantec Revenues Up, Profits Down

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Follow a companywide "organisational simplification initiative" Symantec reports fiscal Q1 2014 revenues of $1.7 billion with 2% growth, even if profits drop by -9% Y-o-Y to $157m.

SymantecThe company makes most revenue from User Productivity & Protection, a segment representing 43% of total Symantec revenues-- if with a -1% Y-o-Y decline on revenues worth $732m.

Information Security (covering mail & web security, authentication services, data center security, Managed Security Services (MSS), hosted security services, and Data Loss Prevention (DLP) businesses) revenues are up by 7% Y-o-Y to $336m, while Information Management grows by 4% Y-o-Y to $641m.

The company also sees 8% Y-o-Y growth from EMEA. The region represents 27% of total Symantec revenues.

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