Samsung starts mass production of the first 512GB embedded Universal Flash Storage (eUFS) solutions, paving the way for mobile devices with even larger storage capacities.
The storage components consist of eight 64-layer 512Gb Samsung V-NAND chips paired with a controller chip. The result is double the density of the previous 48-layer V-NAND-based 256GB eUFS, while taking the same amount of space within a device. Also included are a power management system minimising energy consumption and a faster mapping process for the conversion of logical block addresses to those of physical blocks.
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