Samsung claims to be the first to break the terabyte threshold for smartphone storage-- specifically by starting mass production of a 1TB embedded Universal Flash Storage (eUFS) 2.1 chip.
Designed for next-generation mobile applications, the 1TB chip comes just 4 years after the introduction of the first UFS solution, the 128GB eUFS. The 1TB eUFS solution has the same package size (11.5 x 13mm) as previous chips, but doubles the capacity of the 512GB version by combining 16 stacked layers of 512-gigabit V-NAND flash memory and a proprietary controller. The result, Samsung says, provides enough space to store 260 10-minute videos in 4K (3840 x 2160) resolution.
In addition, the 1TB eUFS promises sequential read speeds reaching up to 1000MB/s, twice the performance of a typical 2.5-inch SATA SSD. Random read speed clocks at 58000 IOPS, a 38% increase over the 512GB version, while random writes reach 50000 IOPS, allowing for high-speed continuous shooting at 960fps. In comparison, the random write of a high-performance microSD reaches 100 IOPS.
“The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices,” the company adds. “What’s more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market.”
To meet demand, Samsung plans to expand production of 5th generation 512Gb V-NAND at the Pyeongtaek plant in Korea throughout H1 2019.