Samsung stacks memory chips on top of each other in its new 8GB DIMM and increases memory density by 50% (compared to conventional DIMM technology)
The new registered or buffered (RDIMM) product is based on Samsung's own Green DDR3 DRAM and 40nm circuitry.
The industry refers to the process as through silicon via (TSV). It creates vertical micron-sized holes through the chip silicon (instead of just horizontal) to create a denser architecture.
Samsung says the technology saves up to 40% of power Continue reading...