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Memory

SD Gets Speedier

19 January 2011 Marco Attard Memory
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SD Gets Speedier

The SD Association announces its UHS-II bus-interface specification-- with HD recording speeds of up to 312MB/s.

The new protocol will make part of SD 4.00 specification, available later this quarter for SDXC and SDHC products.

A second row of pins on UHS-II cards carries the new high-speed interface signals. The interface does not effect current SD card form factors-- products will be available in standard full-size and micro formats.

This also means devices supporting the UHS bus interface Continue reading...

USB 3.0 for Kingston's 2011

12 January 2011 Marco Attard Memory
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USB 3.0 for Kingston's 2011

Kingston plans to develop a full range of USB 3.0 flash drive products this year, following its CES showings.

The company should release its fastest USB 3.0 device yet, the DataTraveler HyperX 3.0. It is part of Kingston's HyperXperience line of high-performance flash products.

The line will also include SSDs, USBs and cards complementing HyperX enthusiast memory modules.

A second generation of the DataTraveler Ultimate 3.0 (the companys's first USB 3.0 flash drive using a SATA bridge chip) will Continue reading...

Hitachi Goes For Slimmer HDDs

28 December 2010 Marco Attard Memory
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Hitachi Goes For Slimmer HDDs

Hitachi unveils its latest Travelstar model, the Z5K500. The HDD carries either 500GB, 320GB or 250GB in a one-disk, 5400RPM, 7mm z-height model.

The drives are designed as a replacement for the standard 2.5" 9.5mm drives in external drives, laptops and blade servers.

The company says its Z5K500 drive family has the best cost per GB and GG/mm3 when compared to SSDs and 2.5" and 1.8" 9.5mm HDDs.

The drives feature 1.8W read/write power and 0.55W low power idle, as well as 8MB cache and SATA 3Gb/sec Continue reading...

3D Memory Stacking From Samsung

09 December 2010 Marco Attard Memory
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3D Memory Stacking From Samsung

Samsung stacks memory chips on top of each other in its new 8GB DIMM and increases memory density by 50% (compared to conventional DIMM technology)

The new registered or buffered (RDIMM) product is based on Samsung's own Green DDR3 DRAM and 40nm circuitry.

The industry refers to the process as through silicon via (TSV). It creates vertical micron-sized holes through the chip silicon (instead of just horizontal) to create a denser architecture.

Samsung says the technology saves up to 40% of power Continue reading...

Micron Goes After NAND Memory Errors

09 December 2010 Marco Attard Memory
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Micron Goes After NAND Memory Errors

Micron integrates error management techniques with its NAND products with ClearNAND.

As semiconductor circuity shrinks, data error rates increase, calling for more sophisticated error correction code (ECC).

ClearNAND eliminates the ECC burden from the host processor through an application-specific integrated circuit (ASIC) and an 8 byte capacity NAND die acting a data collection cache.

The ClearNAND itself appears as a standard NAND interface to the host processor.

Micron uses its 25nm MLC process Continue reading...

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